Invention Grant
- Patent Title: Integrated circuit comprising a single photon-based avalanche diode array and method for manufacturing such integrated circuit
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Application No.: US17076281Application Date: 2020-10-21
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Publication No.: US11621363B2Publication Date: 2023-04-04
- Inventor: Bastien Mamdy
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Slater Matsil, LLP
- Priority: FR1912072 20191028
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/02 ; H01L31/0232 ; H01L31/18
Abstract:
An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.
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Information query
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