Invention Grant
- Patent Title: Epitaxial structure, preparation method thereof, and LED
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Application No.: US17055887Application Date: 2019-09-30
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Publication No.: US11621371B2Publication Date: 2023-04-04
- Inventor: Shungui Yang
- Applicant: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Applicant Address: CN Chongqing
- Assignee: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Current Assignee: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Current Assignee Address: CN Chongqing
- Agency: Hauptman Ham, LLP
- International Application: PCT/CN2019/109724 WO 20190930
- International Announcement: WO2021/062799 WO 20210408
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/32 ; H01L33/00
Abstract:
An epitaxial structure, a preparation method thereof, and a light-emitting diode (LED) are provided. The epitaxial structure includes a sapphire substrate, a GaN layer, a defect exposure layer, and a defect termination layer stacked in sequence.
Public/Granted literature
- US20210305455A1 EPITAXIAL STRUCTURE, PREPARATION METHOD THEREOF, AND LED Public/Granted day:2021-09-30
Information query
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