Invention Grant
- Patent Title: Light-emitting diode chip and method of manufacturing the same
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Application No.: US16472187Application Date: 2017-10-07
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Publication No.: US11621375B2Publication Date: 2023-04-04
- Inventor: Yingce Liu , Bin Song , Junxian Li , Qilong Wu , Yang Wang , Kaixuan Chen , Zhendong Wei , Xingen Wu , Hongyi Zhou , Lihe Cai , Xinmao Huang , Zhiwei Lin , Yongtong Li , Qimeng Lyu , Hexun Cai , Gengcheng Li
- Applicant: Xiamen Changelight Co., Ltd.
- Applicant Address: CN Fujian
- Assignee: Xiamen Changelight Co., Ltd.
- Current Assignee: Xiamen Changelight Co., Ltd.
- Current Assignee Address: CN Fujian
- Agency: Arch & Lake LLP
- Priority: CN201710213823.6 20171007
- International Application: PCT/IB2017/056202 WO 20171007
- International Announcement: WO2018/178754 WO 20181004
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/38 ; H01L33/06

Abstract:
A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
Public/Granted literature
- US20200020830A1 LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-01-16
Information query
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