Invention Grant
- Patent Title: Method for manufacturing Josephson junctions
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Application No.: US17542110Application Date: 2021-12-03
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Publication No.: US11621388B2Publication Date: 2023-04-04
- Inventor: Tianyi Li , Wei Liu , Manjunath Ramachandrappa Venkatesh , Hasnain Ahmad , Kok Wai Chan , Kuan Yen Tan
- Applicant: IQM Finland Oy
- Applicant Address: FI Espoo
- Assignee: IQM Finland Oy
- Current Assignee: IQM Finland Oy
- Current Assignee Address: FI Espoo
- Agency: K&L Gates LLP
- Priority: EP20212122 20201207
- Main IPC: H01L39/24
- IPC: H01L39/24 ; H01L39/22 ; H01L39/02 ; G06N10/00 ; H01L27/18 ; G06N10/40

Abstract:
The present invention relates to the manufacture of Josephson junctions. Such Josephson junctions may be suitable for use in qubits. High-quality, potentially monocrystalline, electrode and dielectric layers are formed using blanket deposition. Subsequently, the structure of one of more Josephson junctions is formed using multi-photon lithography to create openings in a resist followed by etching the electrode and dielectric layers.
Public/Granted literature
- US20220181538A1 METHOD FOR MANUFACTURING JOSEPHSON JUNCTIONS Public/Granted day:2022-06-09
Information query
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