- Patent Title: Semiconductor integrated circuit device and level shifter circuit
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Application No.: US17122737Application Date: 2020-12-15
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Publication No.: US11621705B2Publication Date: 2023-04-04
- Inventor: Masahisa Iida , Masahiro Gion
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H03K19/003 ; H03K19/0185

Abstract:
A semiconductor integrated circuit device includes: first and second transistors provided between a first power source and an output terminal; a step-down circuit that generates a second power source from the first power source; a power source switch circuit that outputs, as a fourth power source, a higher one of potentials of the second power source and a third power source; and a level shifter circuit that transits between the first power source and a fourth power source. The first transistor has a gate connected to an output of the level shifter circuit; the second transistor has a gate connected to the fourth power source.
Public/Granted literature
- US20210105009A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND LEVEL SHIFTER CIRCUIT Public/Granted day:2021-04-08
Information query
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