Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US17460888Application Date: 2021-08-30
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Publication No.: US11622454B2Publication Date: 2023-04-04
- Inventor: Shinya Ohashi , Katsumi Izawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-050996 20190319
- Main IPC: H05K5/00
- IPC: H05K5/00 ; H05K1/18 ; H05K5/03 ; H05K1/11 ; H05K9/00

Abstract:
According to one embodiment, in a semiconductor storage device, a conductive cover is provided on a side of the principal surface, and covers at least a part of the memory and the controller. A substrate has a first notched portion and a second notched portion in an outer edge. The conductive cover has a top plate portion, a first side plate portion, a second side plate portion, a first claw portion, and a second claw portion. The first claw portion is extended from a lower end of the first side plate in a direction intersecting with the principal surface. The first claw portion is fitted into the first notched portion. The second claw portion is extended from a lower end of the second side plate in the direction intersecting with the principal surface. The second claw portion is fitted into the second notched portion.
Public/Granted literature
- US20210392759A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2021-12-16
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