Invention Grant
- Patent Title: Method for manufacturing transparent conductive film
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Application No.: US16758967Application Date: 2018-11-13
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Publication No.: US11624109B2Publication Date: 2023-04-11
- Inventor: Dongmyung Shin , Jongmin Moon
- Applicant: LG CHEM, LTD.
- Applicant Address: KR Seoul
- Assignee: LG CHEM, LTD.
- Current Assignee: LG CHEM, LTD.
- Current Assignee Address: KR Seoul
- Agency: Dentons US LLP
- Priority: KR10-2017-0177885 20171222
- International Application: PCT/KR2018/013833 WO 20181113
- International Announcement: WO2019/124743 WO 20190627
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C23C14/34 ; H01B5/14 ; H01B13/00 ; H01L21/285 ; H01G9/20

Abstract:
A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising—a compound of Chemical Formula 1 on the substrate: BapLaqSnmOn Formula 1 wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and less than or equal to 6, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.
Public/Granted literature
- US20210040598A1 METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM Public/Granted day:2021-02-11
Information query
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