Invention Grant
- Patent Title: Method and system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD)
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Application No.: US16318193Application Date: 2017-07-18
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Publication No.: US11624114B2Publication Date: 2023-04-11
- Inventor: Patricio Häberle Tapia , Christian Orellana Gómez
- Applicant: Universidad Técnica Federico Santa María
- Applicant Address: CL Valparaíso
- Assignee: Universidad Técnica Federico Santa María
- Current Assignee: Universidad Técnica Federico Santa María
- Current Assignee Address: CL Valparaíso
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: CL1858-2016 20160721
- International Application: PCT/CL2017/050032 WO 20170718
- International Announcement: WO2018/014143 WO 20180125
- Main IPC: C23C16/26
- IPC: C23C16/26 ; C23C16/46 ; B82Y40/00 ; H01L21/00 ; B82Y30/00 ; H01L21/02 ; C23C16/54 ; C23C16/44 ; H01L21/285

Abstract:
A method and system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising arranging two copper sheets (40) in a parallel manner and separated by a ceramic material (30, placing said two copper sheets (40) inside an open chamber consisting of a glass chamber (10), heating the two copper sheets (40) to a predetermined temperature by using an electromagnetic induction heater (20), supply a mixture of methane and argon flows to the upper face (18) of said glass cylindrical chamber (10), continually monitoring the temperature of the two copper sheets (40), heating to about 1,000° C. for a predetermined period of time using the electromagnetic induction heater (20), and cooling to room temperature under the same methane and argon flows.
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