Invention Grant
- Patent Title: Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
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Application No.: US17082502Application Date: 2020-10-28
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Publication No.: US11624127B2Publication Date: 2023-04-11
- Inventor: Changseok Lee , Hyeonsuk Shin , Hyeonjin Shin , Seokmo Hong , Minhyun Lee , Seunggeol Nam , Kyungyeol Ma
- Applicant: Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Applicant Address: KR Suwon-si; KR Ulsan
- Assignee: Samsung Electronics Co., Ltd.,UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee: Samsung Electronics Co., Ltd.,UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee Address: KR Suwon-si; KR Ulsan
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0135755 20191029,KR10-2020-0054096 20200506
- Main IPC: C30B29/38
- IPC: C30B29/38 ; H01L21/02
Abstract:
A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
Public/Granted literature
- US20210123161A1 BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER Public/Granted day:2021-04-29
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