Invention Grant
- Patent Title: Semiconductor test apparatus and semiconductor test method
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Application No.: US17386032Application Date: 2021-07-27
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Publication No.: US11624767B2Publication Date: 2023-04-11
- Inventor: Yasushi Takaki , Kinya Yamashita , Masaki Ueno
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2020-179378 20201027
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R1/073

Abstract:
A semiconductor test apparatus according to the present disclosure includes: a stage on which a wafer is to be mounted; a pressurizing wall disposed on a surface of a probe card opposing the stage, extending toward the stage, and having an opening; a mark disposed on a lower surface of the pressurizing wall opposing the stage; a probe disposed in the opening; an air tube to force air into the opening; a detector to detect first spacing between a tip of the probe and the mark; and a controller to control second spacing between the wafer and the lower surface of the pressurizing wall based on the first spacing, wherein, when an electrical property of each of chips of the wafer is measured, the second spacing is controlled to be predetermined spacing by the controller, and the air is forced into the opening through the air tube.
Public/Granted literature
- US20220128616A1 SEMICONDUCTOR TEST APPARATUS AND SEMICONDUCTOR TEST METHOD Public/Granted day:2022-04-28
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