Invention Grant
- Patent Title: Memory block defect detection and management
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Application No.: US17746754Application Date: 2022-05-17
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Publication No.: US11625298B2Publication Date: 2023-04-11
- Inventor: Guang Hu , Ting Luo
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F9/455 ; G06F11/26 ; G06F11/14 ; G06F13/16 ; G06F11/16

Abstract:
An apparatus includes a memory sub-system comprising a plurality of memory blocks and a memory block defect detection component. The memory block defect detection component is to set, for a memory block among the plurality of memory blocks, a first block defect detection rate and determine whether the first block defect detection rate is greater than a threshold block defect detection rate for the at least one memory block. In response to a determination that the first block defect detection rate is greater than the threshold block defect detection rate for the memory block, the memory block defect detection component is to assert a program command on the memory block determine whether a program operation associated with assertion of the program command on the at least one memory block is successful. In response to a determination the program operation is unsuccessful, the memory block defect detection component is to determine that a failure involving a plane associated with the memory block and another plane of the memory sub-system has occurred.
Public/Granted literature
- US20220276928A1 MEMORY BLOCK DEFECT DETECTION AND MANAGEMENT Public/Granted day:2022-09-01
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