Invention Grant
- Patent Title: Quick precharge for memory sensing
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Application No.: US17484524Application Date: 2021-09-24
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Publication No.: US11626150B2Publication Date: 2023-04-11
- Inventor: Kevin T. Majerus
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C11/22 ; G11C29/08

Abstract:
Methods, systems, and devices for performing quick precharge command sequences are described. An operating mode that is associated with a command sequence having a reduced duration relative to another operating mode may be configured at a memory device. The operating mode may be configured based on determining that a procedure does not attempt to preserve or is independent of preserving a logic state of accessed memory cells, among other conditions. While operating in the mode, the memory device may perform a received precharge command using a first set of operations having a first duration—rather than a second set of operations having a second set of operations having a second, longer duration—to perform the received precharge command. The first set of operations may also use less current or introduce less disturbance into the memory device relative to the second set of operations.
Public/Granted literature
- US20220084577A1 QUICK PRECHARGE FOR MEMORY SENSING Public/Granted day:2022-03-17
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