Invention Grant
- Patent Title: Stacked inductor having a discrete metal-stack pattern
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Application No.: US17195220Application Date: 2021-03-08
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Publication No.: US11626236B2Publication Date: 2023-04-11
- Inventor: Jonghae Kim , Changhan Hobie Yun , Je-Hsiung Lan , Ranadeep Dutta
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01F27/28
- IPC: H01F27/28 ; H01F41/04 ; H01L49/02 ; H03H7/01 ; H04B1/18 ; H04B1/40
Abstract:
An inductor includes a first metallization layer multi-turn trace. The inductor also includes a second metallization layer multi-turn trace coupled to the first metallization layer multi-turn trace through at least one first via. The inductor further includes a plurality of discrete third metallization layer trace segments coupled to the second metallization layer multi-turn trace through a plurality of second vias.
Public/Granted literature
- US20220285080A1 STACKED INDUCTOR HAVING A DISCRETE METAL-STACK PATTERN Public/Granted day:2022-09-08
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