Invention Grant
- Patent Title: Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US17697533Application Date: 2022-03-17
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Publication No.: US11626280B2Publication Date: 2023-04-11
- Inventor: Yoshitomo Hashimoto , Kimihiko Nakatani , Takayuki Waseda
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2021-070590 20210419
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/46

Abstract:
There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.
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