Invention Grant
- Patent Title: Method of forming a 2-dimensional channel material, using ion implantation
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Application No.: US17150781Application Date: 2021-01-15
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Publication No.: US11626284B2Publication Date: 2023-04-11
- Inventor: Keith T. Wong , Hurshvardhan Srivastava , Srinivas D. Nemani , Johannes M. van Meer , Rajesh Prasad
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: KDB Firm PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; C23C14/58 ; H01L29/76 ; C23C16/30 ; C23C16/455 ; C23C16/56 ; C23C14/48 ; H01L29/24
Abstract:
A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.
Public/Granted literature
- US20220108886A1 METHOD OF FORMING A 2-DIMENSIONAL CHANNEL MATERIAL USING ION IMPLANTATION Public/Granted day:2022-04-07
Information query
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