Invention Grant
- Patent Title: Method of processing a wafer
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Application No.: US17189862Application Date: 2021-03-02
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Publication No.: US11626324B2Publication Date: 2023-04-11
- Inventor: Karl Heinz Priewasser , Hitoshi Hoshino , Dietmar Mayer
- Applicant: DISCO Corporation
- Applicant Address: JP Tokyo
- Assignee: DISCO Corporation
- Current Assignee: DISCO Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: DE102018200656.3 20180116
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/683
Abstract:
The invention relates to methods of processing a wafer, having on one side a device area with a plurality of devices. In particular, the invention relates to a method which comprises providing a protective film, and applying the protective film to the side of the wafer being opposite to the one side, so that at least a central area of a front surface of the protective film is in direct contact with the side of the wafer being opposite to the one side. The method further comprises applying an external stimulus to the protective film during and/or after applying the protective film to the side of the wafer being opposite to the one side, so that the protective film is attached to the side of the wafer being opposite to the one side, and processing the one side of the wafer and/or the side of the wafer being opposite to the one side.
Public/Granted literature
- US20210183704A1 METHOD OF PROCESSING A WAFER Public/Granted day:2021-06-17
Information query
IPC分类:
