Invention Grant
- Patent Title: Method of making a silicon carbide integrated circuit
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Application No.: US17818402Application Date: 2022-08-09
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Publication No.: US11626325B2Publication Date: 2023-04-11
- Inventor: David Trann Clark , Robin Forster Thompson
- Applicant: Raytheon Systems Limited
- Applicant Address: GB Glenrothes
- Assignee: Raytheon Systems Limited
- Current Assignee: Raytheon Systems Limited
- Current Assignee Address: GB Glenrothes
- Agency: Daly Crowley Mofford & Durkee, LLP
- Priority: GB1705983 20170413
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L27/06 ; H01L29/735 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L21/04 ; H01L29/16 ; H01L27/092 ; H01L27/082
Abstract:
The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.
Public/Granted literature
- US20220384643A1 SILICON CARBIDE INTEGRATED CIRCUIT Public/Granted day:2022-12-01
Information query
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