Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17220461Application Date: 2021-04-01
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Publication No.: US11626333B2Publication Date: 2023-04-11
- Inventor: Nobuhiro Higashi
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JPJP2020-090098 20200522
- Main IPC: H01L23/049
- IPC: H01L23/049 ; H01L25/18 ; H01L23/00 ; H01L23/08 ; H01L23/29 ; H01L23/373 ; H01L25/07

Abstract:
A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.
Public/Granted literature
- US20210366796A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
Information query
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