Invention Grant
- Patent Title: Semiconductor device with enhanced thermal dissipation and method for making the same
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Application No.: US16665783Application Date: 2019-10-28
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Publication No.: US11626343B2Publication Date: 2023-04-11
- Inventor: Yang-Che Chen , Chen-Hua Lin , Huang-Wen Tseng , Victor Chiang Liang , Chwen-Ming Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/00 ; H01L23/367
Abstract:
A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.
Information query
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