Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
-
Application No.: US17367834Application Date: 2021-07-06
-
Publication No.: US11626353B2Publication Date: 2023-04-11
- Inventor: Shuhei Yokoyama , Hiroyuki Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2020-162845 20200929
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/16 ; H01L21/48 ; H01L23/00

Abstract:
According to the present disclosure, a method of manufacturing a semiconductor device includes the steps of (a) preparing a lead frame including a switching element die pad, a control element die pad, and a third-side side rail portion, (b) mounting a switching element and a diode element on the switching element die pad and mounting a control element configured to control the switching element on the control element die pad, (c) sealing the switching element, the diode element, and the control element with a mold resin such that the power side terminal, the control side terminal, and a part of the third-side side rail portion protrude outward, and (d) forming a third-side side rail terminal by cutting the third-side side rail portion, the third-side side rail terminal extending from a part of the third-side side rail portion.
Public/Granted literature
- US20220102250A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2022-03-31
Information query
IPC分类: