Invention Grant
- Patent Title: Method of manufacturing redistribution substrate
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Application No.: US17341510Application Date: 2021-06-08
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Publication No.: US11626354B2Publication Date: 2023-04-11
- Inventor: Seokhyun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2019-0017514 20190215
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L49/02

Abstract:
A redistribution substrate includes a first conductive pattern including a first lower pad and a second lower pad, the first and second lower pads being within a first insulating layer, a second conductive pattern including a first upper pad and a second upper pad, the first and second upper pads being on the first insulating layer, a first via connecting the first lower pad and the first upper pad to each other in the first insulating layer, a second via connecting the second lower pad and the second upper pad to each other in the first insulating layer, and a capacitor between the first lower pad and the first via.
Public/Granted literature
- US20210296163A1 METHOD OF MANUFACTURING REDISTRIBUTION SUBSTRATE Public/Granted day:2021-09-23
Information query
IPC分类: