Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17675902Application Date: 2022-02-18
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Publication No.: US11626356B2Publication Date: 2023-04-11
- Inventor: Nobutoshi Fujii , Yoshihisa Kagawa
- Applicant: Sony Group Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Group Corporation
- Current Assignee: Sony Group Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2011-115634 20110524,JP2011-129190 20110609
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/522 ; H01L27/146 ; H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L23/532

Abstract:
A first semiconductor device includes a first substrate including a first electrode and a second electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and a second substrate including a photodiode, a transfer transistor, and a third electrode and a fourth electrode at a first surface side of the second substrate facing the first surface of the first substrate, and a plurality of transistors.
Public/Granted literature
- US20220246498A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-08-04
Information query
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