Invention Grant
- Patent Title: Three-dimensional integrated circuit (3D IC) power distribution network (PDN) capacitor integration
-
Application No.: US17242083Application Date: 2021-04-27
-
Publication No.: US11626359B2Publication Date: 2023-04-11
- Inventor: Biancun Xie , Shree Krishna Pandey , Irfan Khan , Miguel Miranda Corbalan , Stanley Seungchul Song
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L25/065
Abstract:
A three-dimensional (3D) integrated circuit (IC) includes a first die. The first die includes a 3D stacked capacitor on a first surface of the first die and coupled to a power distribution network (PDN) of the first die. The 3D IC also includes a second die stacked on the first surface of the first die, proximate the 3D stacked capacitor on the first surface of the first die. The 3D IC further includes active circuitry coupled to the 3D stacked capacitor through the PDN of the first die.
Public/Granted literature
- US20220344249A1 THREE-DIMENSIONAL INTEGRATED CIRCUIT (3D IC) POWER DISTRIBUTION NETWORK (PDN) CAPACITOR INTEGRATION Public/Granted day:2022-10-27
Information query
IPC分类:
