Invention Grant
- Patent Title: Power semiconductor module
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Application No.: US17055699Application Date: 2019-05-16
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Publication No.: US11626361B2Publication Date: 2023-04-11
- Inventor: Takashi Tojima , Yasushi Nemoto , Tsutomu Morita , Atsushi Ochiya
- Applicant: KYOCERA Corporation
- Applicant Address: JP Kyoto
- Assignee: KYOCERA Corporation
- Current Assignee: KYOCERA Corporation
- Current Assignee Address: JP Kyoto
- Agency: Volpe Koenig
- Priority: JPJP2018-095022 20180517
- International Application: PCT/JP2019/019564 WO 20190516
- International Announcement: WO2019/221242 WO 20191121
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/498 ; H01L23/373 ; H01L23/40 ; H01L23/00 ; H01L25/07 ; H01L25/18

Abstract:
A power semiconductor module includes an insulating substrate, conductor patterns and a power semiconductor element. The conductor patterns are formed on both surfaces of the insulating substrate. The power semiconductor element is mounted on the conductor patterns. The conductor patterns include an anode terminal connection portion and a cathode terminal connection portion. A circuit is formed such that a current that flows between the anode terminal connection portion and the cathode terminal connection portion via the power semiconductor element flows on the both surfaces of the insulating substrate.
Public/Granted literature
- US20210210421A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2021-07-08
Information query
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