Invention Grant
- Patent Title: Semiconductor device having fuse array and method of making the same
-
Application No.: US17587716Application Date: 2022-01-28
-
Publication No.: US11626368B2Publication Date: 2023-04-11
- Inventor: Meng-Sheng Chang , Shao-Yu Chou , Po-Hsiang Huang , An-Jiao Fu , Chih-Hao Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/525 ; H01L23/528 ; H01L23/535 ; H01L23/00

Abstract:
A method of making a semiconductor device includes operations directed toward electrically connecting a component to a first fuse, wherein the first fuse is on a first conductive level a first distance from the component; identifying a conductive element for omission between the first fuse and a second fuse; and electrically connecting the component to the second fuse, wherein the second fuse is on a second conductive level a second distance from the component, the second distance is greater than the first distance, and the electrically connecting the component to the second fuse comprises electrically connecting the component to the second fuse without forming the identified conductive element.
Public/Granted literature
- US20220157718A1 SEMICONDUCTOR DEVICE HAVING FUSE ARRAY AND METHOD OF MAKING THE SAME Public/Granted day:2022-05-19
Information query
IPC分类: