Invention Grant
- Patent Title: Integrated circuit, system and method of forming same
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Application No.: US17237530Application Date: 2021-04-22
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Publication No.: US11626369B2Publication Date: 2023-04-11
- Inventor: Te-Hsin Chiu , Kam-Tou Sio , Shih-Wei Peng , Wei-Cheng Lin , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L23/528 ; H01L27/092

Abstract:
An integrated circuit includes a first, second and third active region and a first, second and third conductive line. The first, second and third active regions extend in a first direction, and are on a first level of a front-side of a substrate. The second active region is between the first active region and the third active region. The first and second conductive line extend in the first direction, and are on a second level of a back-side of the substrate. The first conductive line is between the first and second active region. The second conductive line is between the second and third active region. The third conductive line extends in the second direction, is on a third level of the back-side of the substrate, overlaps the first and second conductive line, and electrically couples the first and second active regions.
Public/Granted literature
- US20220115324A1 INTEGRATED CIRCUIT, SYSTEM AND METHOD OF FORMING SAME Public/Granted day:2022-04-14
Information query
IPC分类: