Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing thereof
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Application No.: US17198789Application Date: 2021-03-11
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Publication No.: US11626398B2Publication Date: 2023-04-11
- Inventor: Ta-Wei Lin , Fu-Hsiung Yang , Ching-Hsun Hsu , Yu-Lun Lu , Li-Hsuan Yeh , Tsung-Chieh Tsai , Kong-Beng Thei
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L27/06 ; H01L29/66 ; H01L29/861
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a substrate, a diode region, and a dummy stripe. The substrate has a first surface. The diode region is in the substrate. The diode region includes a first implant region of a first conductivity type approximate to the first surface, and a second implant region of a second conductivity type approximate to the first surface and surrounded by the first implant region. The dummy stripe is on the first surface and located between the first implant region and the second implant region. A method for manufacturing a semiconductor structure is also provided.
Public/Granted literature
- US20220293590A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2022-09-15
Information query
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