Invention Grant
- Patent Title: Memory device and hybrid spacer thereof
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Application No.: US17457626Application Date: 2021-12-03
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Publication No.: US11626412B2Publication Date: 2023-04-11
- Inventor: Liheng Liu , Chuan Yang , Shuangshuang Peng
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Wuhan
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Wuhan
- Agency: Anova Law Group, PLLC
- Main IPC: H01L27/11524
- IPC: H01L27/11524 ; H01L21/28 ; H01L27/11563 ; H01L27/11551 ; H01L27/1157 ; H01L27/11578
Abstract:
A method for forming a semiconductor device includes forming a metal layer and a spacer adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.
Public/Granted literature
- US20220093622A1 MEMORY DEVICE AND HYBRID SPACER THEREOF Public/Granted day:2022-03-24
Information query
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