Invention Grant
- Patent Title: Three-dimensional memory device with plural channels per memory opening and methods of making the same
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Application No.: US17119051Application Date: 2020-12-11
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Publication No.: US11626418B2Publication Date: 2023-04-11
- Inventor: Takeki Ninomiya
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/522 ; H01L27/11556 ; H01L25/065 ; H01L25/18 ; H01L23/00 ; H01L25/00
Abstract:
A three-dimensional memory device includes an alternating stacks of insulating layers and electrically conductive layers. Memory opening fill structures located in memory openings include a memory film and plural vertical semiconductor channels.
Public/Granted literature
- US20220189986A1 THREE-DIMENSIONAL MEMORY DEVICE WITH PLURAL CHANNELS PER MEMORY OPENING AND METHODS OF MAKING THE SAME Public/Granted day:2022-06-16
Information query
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