Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US17319389Application Date: 2021-05-13
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Publication No.: US11626422B2Publication Date: 2023-04-11
- Inventor: Shunpei Yamazaki , Hajime Kimura , Takanori Matsuzaki , Kiyoshi Kato , Satoru Okamoto
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2017-119073 20170616,JPJP2017-132740 20170706
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L27/11565 ; H01L27/11573 ; H01L27/11575 ; H01L29/24 ; H01L29/51
Abstract:
A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.
Public/Granted literature
- US20210366926A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
Information query
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