Invention Grant
- Patent Title: Photoelectric conversion apparatus, solid-state image sensor and device
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Application No.: US17383628Application Date: 2021-07-23
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Publication No.: US11626431B2Publication Date: 2023-04-11
- Inventor: Mahito Shinohara , Hiroshi Sekine
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Venable LLP
- Priority: JPJP2020-128505 20200729
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378

Abstract:
A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.
Public/Granted literature
- US20220037380A1 PHOTOELECTRIC CONVERSION APPARATUS, SOLID-STATE IMAGE SENSOR AND DEVICE Public/Granted day:2022-02-03
Information query
IPC分类: