Invention Grant
- Patent Title: Fin Field-Effect Transistor and method of forming the same
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Application No.: US17582729Application Date: 2022-01-24
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Publication No.: US11626510B2Publication Date: 2023-04-11
- Inventor: Shih-Yao Lin , Chih-Han Lin , Shu-Uei Jang , Ya-Yi Tsai , Chi-Hsiang Chang , Tzu-Chung Wang , Shu-Yuan Ku
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L31/119
- IPC: H01L31/119 ; H01L29/76 ; H01L29/94 ; H01L29/66 ; H01L29/417 ; H01L21/8234 ; H01L29/06 ; H01L29/78
Abstract:
A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.
Public/Granted literature
- US20220149181A1 FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME Public/Granted day:2022-05-12
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