Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16207084Application Date: 2018-11-30
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Publication No.: US11626511B2Publication Date: 2023-04-11
- Inventor: Isao Obu , Yasunari Umemoto , Masahiro Shibata , Shigeki Koya , Masao Kondo , Takayuki Tsutsui
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JPJP2017-231786 20171201
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/08 ; H01L29/10 ; H01L29/205 ; H01L21/02 ; H01L21/285 ; H01L21/308 ; H01L21/306 ; H01L29/66 ; H01L23/00
Abstract:
A bipolar transistor including a first collector layer, a second collector layer, a base layer, and an emitter layer is disposed on a substrate. Etching characteristics of the second collector layer are different from etching characteristics of the first collector layer and the base layer. In plan view, an edge of an interface between the first collector layer and the second collector layer is disposed inside an edge of a lower surface of the base layer, and an edge of an upper surface of the second collector layer coincides with the edge of the lower surface of the base layer or is disposed inside the edge of the lower surface of the base layer.
Public/Granted literature
- US20190172933A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-06
Information query
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