Invention Grant
- Patent Title: Semiconductor structure including vertical channel portion and manufacturing method for the same
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Application No.: US17228795Application Date: 2021-04-13
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Publication No.: US11626517B2Publication Date: 2023-04-11
- Inventor: Erh-Kun Lai
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/11582 ; H01L29/66 ; H01L29/423
Abstract:
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure comprises a channel element. The channel element comprises a substrate portion and a vertical channel portion. The vertical channel portion is adjoined on the substrate portion. The substrate portion and the vertical channel portion both comprise single crystal silicon.
Public/Granted literature
- US20220328686A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2022-10-13
Information query
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