Photoelectric conversion layer, solar cell, multi-junction solar cell, solar cell module, and photovoltaic power system
Abstract:
The photoelectric conversion layer of an embodiment is based on Cu2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.
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