Light emitting device having a stacked structure
Abstract:
A light emitting device including a first light emitting part, a second light emitting part, and a third light emitting part each including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween, a first contact member electrically contacting a first surface of the n-type semiconductor layer of the second light emitting part; and a second contact member electrically contacting the n-type semiconductor layer of the third light emitting part, in which the first contact member extends to the first light emitting part to electrically contact the n-type semiconductor layer of the first light emitting part, the first contact member and the second contact member overlap one another, and the second contact member has a width that gradually decreases in a downward direction.
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