Invention Grant
- Patent Title: Electrostatic discharge (ESD) protection circuit and method of operating the same
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Application No.: US17147253Application Date: 2021-01-12
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Publication No.: US11626719B2Publication Date: 2023-04-11
- Inventor: Yu-Hung Yeh , Wun-Jie Lin , Jam-Wem Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H02H3/08
- IPC: H02H3/08 ; H02H1/00

Abstract:
An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode and an ESD clamp circuit. The first diode is in a semiconductor wafer, and is coupled to an input output (IO) pad. The second diode is in the semiconductor wafer, and is coupled to the first diode and the TO pad. The ESD clamp circuit is in the semiconductor wafer, and is coupled to the first diode and the second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer. The first signal tap region is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.
Public/Granted literature
- US20210305802A1 ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND METHOD OF OPERATING THE SAME Public/Granted day:2021-09-30
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