- Patent Title: Operational amplifier based on metal-oxide TFT, chip, and method
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Application No.: US17385020Application Date: 2021-07-26
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Publication No.: US11626845B2Publication Date: 2023-04-11
- Inventor: Rongsheng Chen , Mingzhu Wen , Yuming Xu , Hui Li
- Applicant: South China University of Technology
- Applicant Address: CN Guangzhou
- Assignee: South China University of Technology
- Current Assignee: South China University of Technology
- Current Assignee Address: CN Guangzhou
- Agency: Epstein Drangel LLP
- Agent Robert L. Epstein
- Priority: CN202011089541.8 20201013
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/02 ; H03F1/08

Abstract:
Disclosed is an operational amplifier based on a metal-oxide TFT. The operational amplifier includes an auxiliary amplifier and a bootstrap gain-increasing amplifier. The auxiliary amplifier adopts a two-stage positive feedback structure, including a fifth transistor, a seventh transistor, an eleventh transistor, a first amplifying unit, and a second amplifying unit. A gate of the fifth transistor serves as an input end of the operational amplifier. The bootstrap gain-increasing amplifier includes two second circuits in mutual symmetry. Each of the second circuits includes a first transistor, a second transistor, and a current source unit with a bootstrap structure.
Public/Granted literature
- US20220116001A1 OPERATIONAL AMPLIFIER BASED ON METAL-OXIDE TFT, CHIP, AND METHOD Public/Granted day:2022-04-14
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