Invention Grant
- Patent Title: Method of growing polycrystalline diamond material surrounding single crystal diamond
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Application No.: US16761234Application Date: 2018-11-02
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Publication No.: US11629057B2Publication Date: 2023-04-18
- Inventor: Devi Shanker Misra
- Applicant: IIA Technologies Pte Ltd.
- Applicant Address: SG Singapore
- Assignee: IIA Technologies Pte Ltd.
- Current Assignee: IIA Technologies Pte Ltd.
- Current Assignee Address: SG Singapore
- Agent Kang S. Lim
- Priority: SG10201709086Q 20171103
- International Application: PCT/SG2018/000006 WO 20181102
- International Announcement: WO2019/088916 WO 20190509
- Main IPC: C30B25/04
- IPC: C30B25/04 ; C01B32/26 ; C01B32/28 ; C23C16/04 ; C23C16/27 ; C23C16/56 ; C30B29/04 ; C30B33/08

Abstract:
A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.
Information query
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