Invention Grant
- Patent Title: Method of forming tungsten film and controller
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Application No.: US16353227Application Date: 2019-03-14
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Publication No.: US11629404B2Publication Date: 2023-04-18
- Inventor: Kensaku Narushima , Nagayasu Hiramatsu , Atsushi Matsumoto , Takanobu Hotta
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-057961 20180326
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/02 ; C23C16/52 ; C23C16/455 ; C23C16/34 ; C23C16/08
Abstract:
A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.
Public/Granted literature
- US20190292656A1 Method of Forming Tungsten Film and Controller Public/Granted day:2019-09-26
Information query
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