Invention Grant
- Patent Title: Reflective mask and fabricating method thereof
-
Application No.: US17579433Application Date: 2022-01-19
-
Publication No.: US11630386B2Publication Date: 2023-04-18
- Inventor: Tsiao-Chen Wu , Pei-Cheng Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/80 ; G03F1/40
Abstract:
The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.
Public/Granted literature
- US20220146924A1 REFLECTIVE MASK AND FABRICATING METHOD THEREOF Public/Granted day:2022-05-12
Information query
