Memory apparatus and associated control method for reducing erase disturb of non-volatile memory
Abstract:
A memory apparatus and a control method are provided. The memory apparatus includes a non-volatile memory array having plural memory groups, and the control method is applied to the non-volatile memory array. The memory groups jointly share a first well, and the control method is applied to the non-volatile memory array. A first memory group among the memory groups is erased according to a first erase command after the memory apparatus is power-on, and a first amount of the memory groups are recovered in a first erase-recover procedure after the first memory group is erased. A second memory group among the memory groups is erased according to a second erase command after the first erase-recover procedure, and a second amount of the memory groups are recovered in a second erase-recover procedure after the second memory group is erased. The first amount is greater than the second amount.
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