Invention Grant
- Patent Title: Memory apparatus and associated control method for reducing erase disturb of non-volatile memory
-
Application No.: US17178313Application Date: 2021-02-18
-
Publication No.: US11631464B2Publication Date: 2023-04-18
- Inventor: Su-Chueh Lo , Kuen-Long Chang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/30 ; G11C16/34 ; G11C16/26

Abstract:
A memory apparatus and a control method are provided. The memory apparatus includes a non-volatile memory array having plural memory groups, and the control method is applied to the non-volatile memory array. The memory groups jointly share a first well, and the control method is applied to the non-volatile memory array. A first memory group among the memory groups is erased according to a first erase command after the memory apparatus is power-on, and a first amount of the memory groups are recovered in a first erase-recover procedure after the first memory group is erased. A second memory group among the memory groups is erased according to a second erase command after the first erase-recover procedure, and a second amount of the memory groups are recovered in a second erase-recover procedure after the second memory group is erased. The first amount is greater than the second amount.
Public/Granted literature
- US20210366557A1 MEMORY APPARATUS AND ASSOCIATED CONTROL METHOD FOR REDUCING ERASE DISTURB OF NON-VOLATILE MEMORY Public/Granted day:2021-11-25
Information query