Invention Grant
- Patent Title: High-frequency line connection structure
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Application No.: US17252646Application Date: 2019-05-27
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Publication No.: US11631506B2Publication Date: 2023-04-18
- Inventor: Hiromasa Tanobe , Satoshi Tsunashima
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Priority: JPJP2018-118624 20180622
- International Application: PCT/JP2019/020905 WO 20190527
- International Announcement: WO2019/244567 WO 20191226
- Main IPC: H01B11/18
- IPC: H01B11/18 ; H01P3/06 ; H01P5/08

Abstract:
A high-frequency line connection structure connects a coaxial line and a planar line. The high-frequency line connection structure includes a conductive base that is formed into a planar shape having a length that matches a length of the planar line along a lengthwise direction of a substrate, where the planar line is disposed on a surface of the conductive base, and a protrusion structure provided in a region, on the surface of the conductive base, adjacent to the coaxial line, the protrusion structure protruding from the surface of the conductive base, where the protrusion structure is in contact with a side surface of a region along the lengthwise direction of the substrate, where a ground conductive film with a smaller width out of a pair of ground conductive films of the planar line, is formed.
Public/Granted literature
- US20210210255A1 High-Frequency Line Connection Structure Public/Granted day:2021-07-08
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