Scalable device designs for FINFET technology are provided. In one aspect, a method of forming a FINFET device includes: patterning fins in a substrate which include a first fin(s) corresponding to a first FINFET device and a second fin(s) corresponding to a second FINFET device; depositing a conformal gate dielectric over the fins; depositing a conformal sacrificial layer over the gate dielectric; depositing a sacrificial gate material over the sacrificial layer; replacing the sacrificial layer with a first workfunction-setting metal(s) over the first fin(s) and a second workfunction-setting metal(s) over the second fin(s); removing the sacrificial gate material; forming dielectric gates over the first workfunction-setting metal(s), the second workfunction-setting metal(s) and the gate dielectric forming gate stacks; and forming source and drains in the fins between the gate stacks, wherein the source and drains are separated from the gate stacks by inner spacers. A FINFET device is also provided.