Invention Grant
- Patent Title: Power semiconductor device and method of manufacturing the same, and power conversion device
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Application No.: US17267987Application Date: 2019-09-04
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Publication No.: US11631623B2Publication Date: 2023-04-18
- Inventor: Takamasa Iwai , Junji Fujino , Hiroshi Kawashima
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JPJP2018-166901 20180906
- International Application: PCT/JP2019/034816 WO 20190904
- International Announcement: WO2020/050325 WO 20200312
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/29 ; H01L23/31 ; H01L23/367 ; H01L23/50 ; H01L23/00 ; H01L25/07 ; H01L25/18

Abstract:
A lead member includes a plurality of lead terminals, and the lead terminals extend from the inside to the outside of a mold resin. Each of the lead terminals has a base portion and a tip end portion on the outside of the mold resin. The base portion is disposed on a region side having a semiconductor element and extends in a direction protruding from the mold resin. The tip end portion extends in a direction different from the base portion and is disposed on the opposite side to a region having the semiconductor element as viewed from the base portion. The length by which the base portion extends differs between a pair of lead terminals adjacent to each other, among the lead terminals. At least a surface of the base portion of each of the lead terminals is covered with a coating resin.
Public/Granted literature
- US20210327777A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER CONVERSION DEVICE Public/Granted day:2021-10-21
Information query
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