Invention Grant
- Patent Title: Bump structure having a side recess and semiconductor structure including the same
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Application No.: US17075904Application Date: 2020-10-21
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Publication No.: US11631648B2Publication Date: 2023-04-18
- Inventor: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/00

Abstract:
The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.
Public/Granted literature
- US20210035938A1 BUMP STRUCTURE HAVING A SIDE RECESS AND SEMICONDUCTOR STRUCTURE INCLUDING THE SAME Public/Granted day:2021-02-04
Information query
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