Invention Grant
- Patent Title: Method and apparatus for bonding semiconductor substrate
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Application No.: US16663362Application Date: 2019-10-25
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Publication No.: US11631652B2Publication Date: 2023-04-18
- Inventor: Ying-Jui Huang , Ching-Hua Hsieh , Chien-Ling Hwang , Chia-Sheng Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/67 ; H01L21/68 ; H01L21/82

Abstract:
A method and an apparatus for bonding semiconductor substrates are provided. The method includes at least the following steps. A first position of a first semiconductor substrate on a first support is gauged by a gauging component embedded in the first support and a first sensor facing towards the gauging component. A second semiconductor substrate is transferred to a position above the first semiconductor substrate by a second support. A second position of the second semiconductor substrate is gauged by a second sensor mounted on the second support and located above the first support. The first semiconductor substrate is positioned based on the second position of the second semiconductor substrate. The second semiconductor substrate is bonded to the first semiconductor substrate.
Public/Granted literature
- US20200227379A1 METHOD AND APPARATUS FOR BONDING SEMICONDUCTOR SUBSTRATE Public/Granted day:2020-07-16
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