Invention Grant
- Patent Title: Bonded unified semiconductor chips and fabrication and operation methods thereof
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Application No.: US17540224Application Date: 2021-12-01
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Publication No.: US11631688B2Publication Date: 2023-04-18
- Inventor: Jun Liu , Weihua Cheng
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Bayes PLLC
- Priority: WOPCT/CN2019/085237 20190430
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/1157 ; H01L21/50 ; H01L23/00 ; H01L27/06 ; H01L27/108 ; H01L27/11578 ; G11C14/00 ; G11C16/04 ; H01L25/18 ; H01L25/00 ; H01L27/11526 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L29/04 ; H01L29/16 ; H01L21/02 ; H01L21/20 ; H01L21/76 ; H01L21/822 ; H01L25/065

Abstract:
Embodiments of bonded unified semiconductor chips and fabrication and operation methods thereof are disclosed. In an example, a method for forming a unified semiconductor chip is disclosed. A first semiconductor structure is formed. The first semiconductor structure includes one or more processors, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. A second semiconductor structure is formed. The second semiconductor structure includes an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The first semiconductor structure and the second semiconductor structure are bonded in a face-to-face manner, such that the first bonding contacts are in contact with the second bonding contacts at a bonding interface.
Public/Granted literature
- US20220093614A1 BONDED UNIFIED SEMICONDUCTOR CHIPS AND FABRICATION AND OPERATION METHODS THEREOF Public/Granted day:2022-03-24
Information query
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