Invention Grant
- Patent Title: Transistor having blocks of source and drain silicides near the channel
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Application No.: US16681905Application Date: 2019-11-13
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Publication No.: US11631739B2Publication Date: 2023-04-18
- Inventor: Fabrice Nemouchi , Antonio Lacerda Santos Neto , Francois Lefloch
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1860511 20181114
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/28 ; H01L21/324 ; H01L21/8234 ; H01L29/49
Abstract:
A method for producing a transistor includes producing on a substrate provided with a semiconductor surface layer in which an active area can be formed, a gate block arranged on the active area. Lateral protection areas are formed against lateral faces of the gate block. Source and drain regions based on a metal material-semiconductor material compound are formed on either side of the gate and in the continuation of a portion located facing the gate block. Insulating spacers are formed on either side of the gate resting on the regions based on a metal material-semiconductor material compound.
Public/Granted literature
- US20200161422A1 TRANSISTOR HAVING BLOCKS OF SOURCE AND DRAIN SILICIDES NEAR THE CHANNEL Public/Granted day:2020-05-21
Information query
IPC分类:
