Invention Grant
- Patent Title: Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency
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Application No.: US16076173Application Date: 2016-11-07
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Publication No.: US11631779B2Publication Date: 2023-04-18
- Inventor: Hiroshi Hashigami , Takenori Watabe , Hiroyuki Ohtsuka , Ryo Mitta
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2016/004824 WO 20161107
- International Announcement: WO2018/083722 WO 20180511
- Main IPC: H01L31/068
- IPC: H01L31/068 ; H01L31/0224 ; H01L31/18 ; H01L31/0216

Abstract:
A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×1018 atoms/cm3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.
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